| PART |
Description |
Maker |
| NE3510M04 NE3510M04-A NE3510M04-T2 NE3510M04-T2-A |
HETERO JUNCTION FIELD EFFECT TRANSISTOR
|
California Eastern Labs
|
| NE350184C NE350184C-T1 NE350184C-T1A |
HETERO JUNCTION FIELD EFFECT TRANSISTOR K-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
|
California Eastern Laboratories
|
| MMT3823 |
JUNCTION FIELD EFFECT TRANSISTOR
|
MOTOROLA[Motorola, Inc]
|
| NJ26 |
Silicon Junction Field-Effect Transistor
|
InterFET Corporation
|
| NJ26A |
Silicon Junction Field-Effect Transistor
|
INTERFET[InterFET Corporation]
|
| NJ903L |
Silicon Junction Field-Effect Transistor
|
INTERFET[InterFET Corporation]
|
| NJ14AL |
Silicon Junction Field-Effect Transistor
|
InterFET Corporation
|
| NJ450L |
Silicon Junction Field-Effect Transistor
|
INTERFET[InterFET Corporation]
|
| 2N5460 2N5461 |
P-Channel Silicon Junction Field-Effect Transistor
|
InterFET Corporation
|
| SMP5398 SMP5397 |
N-Channel silicon junction field-effect transistor
|
InterFET Corporation
|
| NTE312 |
N-Channel Silicon Junction Field Effect Transistor
|
NTE[NTE Electronics]
|
